Transistor:unipolar,N-MOSFET;100V;57A;200W;D2PAK
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Experimental product description generated by artificial intelligence
INFINEON Transistor:unipolar,N-MOSFET;100V;57A;200W;D2PAK
This INFINEON N-channel MOSFET, also known as a power MOSFET or HEXFET, is a high-performance semiconductor device ideal for various power switching applications. Its D2PAK surface mount package offers high power capability and low on-resistance.
Key Features
- Unipolar N-MOSFET: A type of transistor with a single type of charge carrier (electrons).
- 100V Voltage Rating: Capable of withstanding a maximum drain-source voltage of 100V.
- 57A Current Rating: Handles a continuous drain current of 57A.
- 200W Power Dissipation: Designed to dissipate up to 200W of power.
- D2PAK Package: A surface mount package suitable for high-power applications.
Applications
This versatile MOSFET is suitable for a wide range of applications including:
- Power supplies
- Motor control
- Switching regulators
- Inverters
- Other high-power switching circuits
Why Choose This Product?
The INFINEON Transistor:unipolar,N-MOSFET;100V;57A;200W;D2PAK offers a compelling combination of high performance and reliability. Its advanced HEXFET technology ensures low on-resistance, fast switching speeds, and robust operation. The D2PAK package provides excellent thermal performance and ease of integration into surface mount designs.
| Parameter | Value |
|---|---|
| Voltage Rating | 100V |
| Current Rating | 57A |
| Power Dissipation | 200W |
| Package | D2PAK |
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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