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Product description
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Experimental product description generated by artificial intelligence
The HITACHI 2SD669, 2SD669A Transistor NPN 180V 1.5A 20W 140MHz TO126 is a silicon NPN epitaxial transistor designed for low frequency power amplifier applications. It is part of a complementary pair with the 2SB649/A transistor.
This transistor is housed in a TO-126 package and features the following key parameters:
- Collector to base voltage: 180V
- Collector to emitter voltage: 120V (2SD669) / 160V (2SD669A)
- Collector current: 1.5A
- Collector power dissipation: 1W
- Junction temperature: 150°C
- Storage temperature: -55 to +150°C
The 2SD669 and 2SD669A transistors are grouped by their DC current transfer ratio (hFE1) as follows:
| Transistor | hFE1 Range |
|---|---|
| 2SD669 | 60 to 120, 100 to 200, 160 to 320 |
| 2SD669A | 60 to 120, 100 to 200 |
This transistor is a great choice for low frequency power amplifier applications due to its high power handling capability and low saturation voltage. It is also suitable for use in other applications where a high-performance NPN transistor is required.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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