Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Product Code: BXW3M1K7H
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Product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Useful information
Specifications
SKU
U-2590572
Product code
BXW3M1K7H
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W
Useful information
Supplier parameters
Product code
BXW3M1K7H
Case
TO247-3
Drain current
3A
Drain-source voltage
1.7kV
Gate charge
15nC
Gate-source voltage
-3...20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
BRIDGELUX
Mounting
THT
On-state resistance
1.69Ω
Polarisation
unipolar
Power dissipation
69W
Pulsed drain current
12A
Technology
SiC
Type of transistor
N-MOSFET
Supplier's product code
BXW3M1K7H
Product ID
U-2590572
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