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Product description
Useful information
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Experimental product description generated by artificial intelligence
Transistor MOS-N-Ch+Z-Dio 800V 5.2A 30W 1.8R TO-220FP
This N-channel 800V Zener-protected SuperMESHâ„¢ Power MOSFET from STMicroelectronics is a high-performance device ideal for various switching applications.
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Very low intrinsic capacitances
- Excellent manufacturing repeatability
Applications
This MOSFET is well-suited for switching applications demanding high voltage and current handling. Its robust design ensures reliable performance in demanding environments.
Why Choose This Product?
The STMicroelectronics SuperMESHâ„¢ series offers significant improvements in on-resistance and dv/dt capability. This transistor combines high performance with a robust design, making it a reliable choice for your power switching needs. The integrated Zener diodes provide additional protection against voltage transients.
Main Parameters
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 800V |
| Drain Current (ID) | 5.2A |
| Power Dissipation (PTOT) | 30W |
| On-Resistance (RDS(on)) | 1.8Ω |
| Package | TO-220FP |
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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