Transistor MOS-N-Ch+Z-Dio 600V 6A 110W 1.2R TO220
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Experimental product description generated by artificial intelligence
The STB6NK60Z is a N-channel 600 V - 1 Ω - 6 Α - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™™ Power MOSFET. It is obtained through an extreme optimization of ST's well established strip-based PowerMESH™™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
The STB6NK60Z is a high-performance MOSFET that is ideal for a variety of applications, including:
- Switching applications
The STB6NK60Z offers a number of advantages, including:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
If you are looking for a high-performance MOSFET that is reliable and easy to use, the STB6NK60Z is an excellent choice.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
- Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
- Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
- Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
- Name or Model Discrepancies: AI may misrepresent the product name or model.
If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail toš you: [email protected].
