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Transistor MOS-N-Ch 100V 16A 90W 0.16R

Product Code: IRF530
Brand
New!

Price range

AmountPrice with tax (pcs)
1
1.291.29
2+
1.10
wholesale

Min. qty: 1

Unit: pcs

Total:

1.29

*Total delivery cost will be calculated in the checkout.

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Product description

MOS-N-Ch 100V 16A 90W 0.16R

Useful information


Specifications

SKU
27483
Weight
0.001987 kg.
Power, W
88
Brand
Housing
TO220AB
Current, A
16
Structure
MOS-N-Ch
Resistance, Ω
0.16
Product code
IRF530
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

VISHAY Transistor MOS-N-Ch 100V 16A 90W 0.16R

This high-power N-Channel MOSFET from Vishay offers a compelling combination of speed, robustness, low resistance, and cost-effectiveness. It's part of Vishay's third-generation Power MOSFET family, designed for demanding applications.

Key Features

  • High Voltage Rating: 100V
  • High Current Capability: 16A
  • High Power Dissipation: 90W
  • Low On-Resistance: 0.16R
  • Fast Switching: Ideal for high-frequency applications
  • Ease of Paralleling: Simplifies design for higher current needs
  • TO-220AB Package: Widely accepted and thermally efficient
  • RoHS Compliant: Meets environmental regulations

Applications

This versatile MOSFET is suitable for a wide range of power switching applications, including:

  • Power supplies
  • Motor control
  • Industrial automation
  • Lighting systems

Why Choose This Product?

The VISHAY Transistor MOS-N-Ch 100V 16A 90W 0.16R provides superior performance and reliability. Its combination of high voltage, current, and power handling capabilities, along with its low on-resistance and fast switching speed, makes it an excellent choice for demanding applications. The TO-220AB package ensures efficient heat dissipation, contributing to its long lifespan and robust operation.

ParameterValue
Voltage Rating100V
Current Rating16A
Power Rating90W
On-Resistance0.16Ω

Note: Specific details may vary. Refer to the datasheet for complete specifications.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB

Useful information

Supplier parameters

Case
TO220AB
Drain current
10A
Drain-source voltage
100V
Gate charge
26nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
0.16Ω
Polarisation
unipolar
Power dissipation
88W
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .