Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN ONSEMI
Product Code: FDA16N50LDTU
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Product description
Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Supplier parameters
Product code
FDA16N50LDTU
Brand
ON SEMICONDUCTOR
Supplier's product code
FDA16N50LDTU
Product ID
U-2412858
Case
TO3PN
Drain current
3.3A
Drain-source voltage
500V
Gate charge
45nC
Gate-source voltage
±30V
Kind of channel
enhancement
Kind of package
tube
Manufacturer
ONSEMI
Mounting
THT
On-state resistance
0.38Ω
Polarisation
unipolar
Power dissipation
205W
Pulsed drain current
66A
Technology
DMOS
Type of transistor
N-MOSFET
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