Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A STARPOWER SEMICONDUCTOR
Product Code: GD10PJX65F1S
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A STARPOWER SEMICONDUCTOR
Specifications
SKU
U-2964918
Product code
GD10PJX65F1S
Supplier product description
Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Supplier parameters
Product code
GD10PJX65F1S
Supplier's product code
GD10PJX65F1S
Product ID
U-2964918
Case
F1.1
Collector current
10A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
650V
Mechanical mounting
screw
Pulsed collector current
20A
Semiconductor structure
diode/transistor
Technology
Trench FS IGBT
Type of module
IGBT
Topology
three-phase diode bridge
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
