Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A
Product Code: P4F60HP2-5600
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Product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A
Useful information
Specifications
SKU
U-1937102
Product code
P4F60HP2-5600
Supplier product description
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A
Useful information
Supplier parameters
Product code
P4F60HP2-5600
Supplier's product code
P4F60HP2-5600
Product ID
U-1937102
Case
FTO-220AG (SC91)
Drain current
4A
Drain-source voltage
600V
Gate charge
12.5nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
bulk
Manufacturer
SHINDENGEN
Mounting
THT
On-state resistance
1.8Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
16A
Technology
Hi-PotMOS2
Type of transistor
N-MOSFET
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