Transistor MOS-P-Ch 55V 18A 57W 0.11R TO252AA
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Experimental product description generated by artificial intelligence
Transistor MOS-P-Ch 55V 18A 57W 0.11R TO252AA
The INFINEON Transistor MOS-P-Ch 55V 18A 57W 0.11R TO252AA belongs to the MOSFETs category. This powerful and efficient device is ideal for various applications requiring high performance and reliability.
Main Parameters and Functions
This P-Channel MOSFET features:
- Drain-to-Source Breakdown Voltage (VDSS): -55V
- Drain Current (ID): -18A
- Power Dissipation (PD): 57W
- On-Resistance (RDS(on)): 0.11Ω
Its key functions include switching and amplifying electrical signals. The low on-resistance ensures minimal power loss during operation.
Uses
This versatile MOSFET finds applications in a wide range of electronic systems, including:
- Power supplies
- Motor control
- Switching circuits
- Other high-power applications
Why Choose This Product?
The INFINEON Transistor MOS-P-Ch 55V 18A 57W 0.11R TO252AA offers a compelling combination of high performance, reliability, and efficiency. Its robust design and advanced process technology make it a superior choice for demanding applications.
| Feature | Benefit |
|---|---|
| High Voltage Rating | Suitable for high-voltage applications |
| High Current Capacity | Handles significant current loads |
| Low On-Resistance | Minimizes power loss |
| Fast Switching Speed | Efficient switching performance |
| Robust Design | Ensures long-term reliability |
This product is a reliable and efficient solution for your power management needs.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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