Transistor MOS-N-Ch 600V 7.2A 125W <1.2om(3.6A)
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Experimental product description generated by artificial intelligence
Transistor MOS-N-Ch 600V 7.2A 125W <1.2om(3.6A)
This N-Channel Enhancement Mode Power MOSFET is a high-performance device ideal for various power switching applications. It utilizes a patented MESH OVERLAY process for superior performance.
Key Features
- High Voltage: 600V Drain-Source Voltage
- High Current: 7.2A continuous drain current (at 25°C)
- Low RDS(on): Ensures efficient power handling
- Exceptional Avalanche and dv/dt Capabilities: Robust performance under demanding conditions
- Low Gate Charge: Fast switching speeds
Applications
This versatile MOSFET is suitable for a wide range of applications, including:
- High-current, high-speed switching
- Switch-mode power supplies (SMPS)
- DC-AC converters for welding equipment
- Uninterruptible power supplies
- Motor drives
Why Choose This Product?
This MOSFET offers a compelling combination of high voltage, high current handling, low on-resistance, and excellent switching characteristics. Its robust design and advanced manufacturing process make it a reliable and efficient solution for your power switching needs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600V |
| Drain Current (ID) | 7.2A |
| Total Dissipation (Ptot) | 125W |
| Drain-Source On-Resistance (RDS(on)) | <1.2Ω (at 3.6A) |
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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