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Transistor MOS-N-Ch 600V 3.5A 35W TO-220FP

Product Code: 2SK3567
Brand
New!

Price range

AmountPrice with tax (pcs)
1
2.802.80
2+
2.52
wholesale

Min. qty: 1

Unit: pcs

Total:

2.80

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Product description

MOS-N-Ch 600V 3.5A 35W TO-220FP

Useful information


Specifications

SKU
63384
Weight
0.01 kg.
Power, W
35
Brand
Housing
TO220
Current, A
3.5
Structure
MOS-N-Ch
Product code
2SK3567
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

TOSHIBA 2SK3567 Transistor MOS-N-Ch 600V 3.5A 35W TO-220FP

The TOSHIBA 2SK3567 is a high-performance N-channel MOSFET transistor, ideal for various switching regulator applications. This power MOSFET is characterized by its low drain-source on-resistance and high forward transfer admittance, making it an efficient and reliable choice for power management circuits.

Key Features and Benefits

  • Low Drain-Source On-Resistance (RDS(ON)): Ensures minimal power loss during operation, leading to improved efficiency.
  • High Forward Transfer Admittance (|Yfs|): Facilitates fast switching speeds and improved response times.
  • High Voltage Rating (600V): Suitable for applications requiring high voltage handling capabilities.
  • TO-220FP Package: Offers excellent thermal performance and ease of mounting.

Applications

This versatile MOSFET is well-suited for a wide range of applications, including:

  • Switching regulators
  • Power supplies
  • Motor control
  • Other power management circuits

Why Choose the TOSHIBA 2SK3567?

The TOSHIBA 2SK3567 combines high performance with reliability, making it a superior choice for demanding applications. Its key features, such as low RDS(ON) and high |Yfs|, contribute to efficient and responsive operation. The robust design ensures long-term reliability and stability.

ParameterValue
Drain-Source Voltage (VDSS)600V
Drain Current (ID)3.5A
Power Dissipation (PD)35W

This MOSFET is an excellent solution for engineers seeking a high-performance, reliable, and easy-to-use component for their power electronics designs.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].