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Experimental product description generated by artificial intelligence
TOSHIBA 2SK3567 Transistor MOS-N-Ch 600V 3.5A 35W TO-220FP
The TOSHIBA 2SK3567 is a high-performance N-channel MOSFET transistor, ideal for various switching regulator applications. This power MOSFET is characterized by its low drain-source on-resistance and high forward transfer admittance, making it an efficient and reliable choice for power management circuits.
Key Features and Benefits
- Low Drain-Source On-Resistance (RDS(ON)): Ensures minimal power loss during operation, leading to improved efficiency.
- High Forward Transfer Admittance (|Yfs|): Facilitates fast switching speeds and improved response times.
- High Voltage Rating (600V): Suitable for applications requiring high voltage handling capabilities.
- TO-220FP Package: Offers excellent thermal performance and ease of mounting.
Applications
This versatile MOSFET is well-suited for a wide range of applications, including:
- Switching regulators
- Power supplies
- Motor control
- Other power management circuits
Why Choose the TOSHIBA 2SK3567?
The TOSHIBA 2SK3567 combines high performance with reliability, making it a superior choice for demanding applications. Its key features, such as low RDS(ON) and high |Yfs|, contribute to efficient and responsive operation. The robust design ensures long-term reliability and stability.
Parameter | Value |
---|---|
Drain-Source Voltage (VDSS) | 600V |
Drain Current (ID) | 3.5A |
Power Dissipation (PD) | 35W |
This MOSFET is an excellent solution for engineers seeking a high-performance, reliable, and easy-to-use component for their power electronics designs.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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