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Transistor IGBT 600V 23A 100W TO220AB

Product Code: IRG4BC30U
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€2.45€2.45
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€2.21
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€2.45

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Product description

INTERNATIONAL RECTIFIER
MOS-N-Ch 600V 23A 100W TO220AB

Useful information


Specifications

SKU
31848
Weight
0.004 kg.
Power, W
100
Housing
TO220AB
Current, A
23
Structure
MOS-N-Ch
Product code
IRG4BC30U
Power., W
100
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

Transistor IGBT 600V 23A 100W TO220AB

The INTERNATIONAL RECTIFIER IRG4BC30U, also known as a 600V 23A 100W TO220AB IGBT transistor, is a high-performance power semiconductor device belonging to the IGBTs category. This UltraFast IGBT is optimized for high operating frequencies, making it suitable for a variety of applications.

Key Features

  • UltraFast design optimized for high operating frequencies (8-40kHz in hard switching, >200kHz in resonant mode).
  • Generation 4 IGBT design offering tighter parameter distribution and higher efficiency compared to Generation 3 IGBTs.
  • Industry-standard TO-220AB package for ease of integration.

Benefits

  • Highest efficiency available in its generation.
  • Optimized for specified application conditions.
  • Designed as a direct replacement for equivalent industry-standard Generation 3 IGBTs.

Applications

This versatile IGBT finds use in various applications requiring high-frequency switching and efficient power control. Specific applications will depend on the overall system design.

Why Choose This Product?

The INTERNATIONAL RECTIFIER IRG4BC30U provides a compelling combination of high efficiency, speed, and ease of use. Its compatibility with existing Generation 3 IGBT designs simplifies integration into existing systems. The robust TO-220AB package ensures reliable performance and longevity.

ParameterValue
Collector-to-Emitter Breakdown Voltage (VCES)600V
Continuous Collector Current (Ic @ Tc = 25°C)23A
Maximum Power Dissipation (PD @ Tc = 25°C)100W

Note: This description is based solely on the provided information and datasheet. For complete specifications and detailed application information, please refer to the full datasheet.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
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  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].