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Transistor MOS-N-ch 55V 169A 330W 5.3mΩ TO220

Product Code: IRF1405PBF
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€3.90€3.90
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€3.51
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€3.90

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Product description

INFINEON
MOS-N-Ch 55V 169A TO220

Useful information


Specifications

SKU
127970
Weight
0.00016 kg.
Power, W
330
Housing
TO220
Current, A
169
Structure
MOS-N-Ch
Product code
IRF1405PBF
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

INFINEON Transistor MOS-N-ch 55V 169A 330W 5.3mΩ TO220

This INFINEON power MOSFET transistor, also known as a power metal-oxide-semiconductor field-effect transistor, belongs to the MOSFETs category. It's a high-power N-channel device designed for demanding applications.

Key Features

  • High Voltage Rating: 55V
  • High Current Handling: 169A
  • High Power Dissipation: 330W
  • Low On-Resistance: 5.3mΩ ensures efficient power handling and minimal energy loss.
  • TO-220 Package: Standard industry package for easy integration.

Applications

This robust transistor is suitable for various applications requiring high current and power handling capabilities. Examples include:

  • Automotive applications (Electric Power Steering, Anti-lock Braking Systems)
  • Power control systems
  • Industrial motor control
  • Power supplies

Why Choose This Product?

The INFINEON Transistor MOS-N-ch 55V 169A 330W 5.3mΩ TO220 offers a compelling combination of high performance and reliability. Its low on-resistance contributes to high efficiency, while its robust design ensures long-term operation even under demanding conditions. The TO-220 package makes it easy to integrate into existing designs.

Specifications

ParameterValue
Transistor TypeN-MOSFET
Voltage Rating (VDSS)55V
Current Rating (ID)169A
Power Dissipation (PD)330W
On-Resistance (RDS(on))5.3mΩ
PackageTO-220

This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB

Useful information

Supplier parameters

Case
TO220AB
Drain current
133A
Drain-source voltage
55V
Gate charge
170nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
5.3mΩ
Polarisation
unipolar
Power dissipation
200W
Technology
HEXFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .