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Experimental product description generated by artificial intelligence
Transistor MOS-N-Ch 50V 60A 250W 0.18R TO220
The Siemens BUZ100 is a high-power N-channel enhancement mode MOSFET transistor in a TO-220 package. This power transistor is avalanche-rated and dv/dt rated, ensuring robust performance in demanding applications.
Key Features:
- N-Channel MOSFET
- 50V Drain-Source Breakdown Voltage
- 60A Continuous Drain Current
- 250W Power Dissipation
- Ultra-low On-Resistance (0.18R)
- TO-220 Package
- 175°C Operating Temperature
- Avalanche Rated
- dv/dt Rated
Applications:
This versatile power MOSFET is suitable for a wide range of applications where high current and power handling are required. Examples include:
- Switching power supplies
- Motor control
- Industrial automation
- Power inverters
Why Choose This Product?
The Siemens BUZ100 offers a compelling combination of high performance and reliability. Its low on-resistance minimizes power losses, while its high current and voltage ratings make it suitable for demanding applications. The avalanche and dv/dt ratings provide additional protection against transient events. The TO-220 package offers excellent thermal performance and ease of mounting.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 50V |
| Drain Current (ID) | 60A |
| Power Dissipation (Ptot) | 250W |
| On-Resistance (RDS(on)) | 0.18Ω |
| Package | TO-220 |
Note: Always consult the full datasheet for complete specifications and operating instructions before using this device.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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