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Product description
MOS-N-Ch 500V 8.7A 190W 0.4R TO247AC
Useful information
Specifications
Experimental product description generated by artificial intelligence
Transistor MOS-N-Ch 500V 8.7A 190W 0.4R TO247AC
This high-power N-channel MOSFET from Vishay offers a robust solution for various applications demanding high voltage and current handling capabilities.
Key Features
- High Voltage Rating: Capable of withstanding a drain-source voltage of 500V.
- High Current Handling: Designed to handle continuous drain currents up to 8.7A.
- High Power Dissipation: Manages power dissipation up to 190W.
- Low On-Resistance: Features a low on-resistance of 0.4R, minimizing power loss.
- TO-247AC Package: Comes in a TO-247AC package, suitable for commercial and industrial applications.
Applications
This versatile MOSFET is ideal for a wide range of applications, including:
- Power supplies
- Motor control
- Switching circuits
- Industrial automation
Why Choose This Product?
The Vishay Transistor MOS-N-Ch 500V 8.7A 190W 0.4R TO247AC stands out due to its combination of high voltage and current handling capabilities, low on-resistance, and robust TO-247AC packaging. This makes it a reliable and efficient choice for demanding applications.
Parameter | Value |
---|---|
Drain-Source Voltage (VDS) | 500V |
Continuous Drain Current (ID) | 8.7A |
Power Dissipation (PD) | 190W |
On-Resistance (RDS(on)) | 0.4R |
Package | TO-247AC |
Note: Always refer to the datasheet for complete specifications and safety precautions before using this component.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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