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Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR

Product Code: BGH50N65HF1
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Price range

AmountPrice with tax (pcs)
1-4
18.95
5-29
17.15
30-149
15.09
150-599
12.64
600+
12.20
wholesale

Min. qty: 1

Multiplier: 1

Total:

18.95
2024-10-03 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Warehouse in Europe

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Product description

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 BASiC SEMICONDUCTOR

Useful information


Specifications

SKU
U-2710903
Product code
BGH50N65HF1

Supplier product description

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3

Useful information

Supplier parameters

Product code
BGH50N65HF1
Brand
BASiC SEMICONDUCTOR
Supplier's product code
BGH50N65HF1
Product ID
U-2710903
Case
TO247-3
Collector current
50A
Collector-emitter voltage
650V
Features of semiconductor devices
integrated anti-parallel diode
Gate charge
308nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
BASiC SEMICONDUCTOR
Mounting
THT
Power dissipation
357W
Pulsed collector current
200A
Technology
Trench
Type of transistor
IGBT
Turn-off time
256ns
Turn-on time
54ns
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .