
Warehouse in Europe

94%+ positive feedback

30 day money back guarantee
Product description
Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 ONSEMI
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Supplier parameters
Product code
FQT4N25TF
Brand
ON SEMICONDUCTOR
Supplier's product code
FQT4N25TF
Product ID
U-2349901
Case
SOT223
Drain current
0.66A
Drain-source voltage
250V
Gate charge
5.6nC
Gate-source voltage
±30V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
1.75Ω
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
3.3A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .