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Product description
Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW TOSHIBA
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Useful information
Supplier parameters
Supplier's product code
2SK3475
Product ID
U-80356
Case
SOT89
Drain current
1A
Drain-source voltage
20V
Efficiency
45%
Electrical mounting
SMT
Frequency
520MHz
Gate-source voltage
±10V
Kind of channel
depleted
Kind of package
tape
Kind of transistor
RF
Manufacturer
TOSHIBA
Open-loop gain
14.9dB
Output power
630mW
Polarisation
unipolar
Power dissipation
3W
Type of transistor
N-MOSFET
Brand
TOSHIBA
Product code
2SK3475
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