IGBT, MODULE, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Diss

This N-Channel IGBT Module is a powerful and versatile semiconductor device designed for a wide range of applications. It features a collector-emitter saturation voltage (Vce(on)) of 1.7V and a DC collector current of 25A, making it suitable for handling significant power loads.

Key Features:

• Transistor Polarity: N Channel
• DC Collector Current: 25A
• Collector Emitter Saturation Voltage Vce(on): 1.7V

Applications:

This IGBT module is ideal for various applications, including:

• Power switching circuits
• Motor control systems
• Industrial automation
• Power supplies
• Inverters

Benefits:

• High efficiency: The low Vce(on) minimizes power dissipation, resulting in improved efficiency.
• Fast switching speeds: The IGBT module offers fast switching speeds, enabling efficient power control.
• Robust design: The module is designed for reliable operation in demanding environments.

Why Choose This Product?

This IGBT module provides a reliable and efficient solution for power switching applications. Its high current handling capability, low saturation voltage, and fast switching speeds make it an excellent choice for a wide range of industrial and consumer electronics applications.

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